Electronic structure and transmission characteristics of SiGe nanowires
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چکیده
منابع مشابه
Electronic structure and transmission characteristics of SiGe nanowires
Atomistic disorder such as alloy disorder, surface roughness and inhomogeneous strain are known to influence electronic structure and charge transport. Scaling of device dimensions to the nanometer regime enhances the effects of disorder on device characteristics and the need for atomistic modeling arises. In this work SiGe alloy nanowires are studied from two different points of view: (1) Elec...
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SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than thre...
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2008
ISSN: 1569-8025,1572-8137
DOI: 10.1007/s10825-008-0191-9